? semiconductor components industries, llc, 2015 march, 2015 ? rev. 2 1 publication order number: mmbt5401w/d mmbt5401w high voltage transistor pnp silicon features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ?emitter voltage v ceo ?150 vdc collector ?base voltage v cbo ?160 vdc emitter ?base voltage v ebo ?5.0 vdc collector current ? continuous i c ?500 madc stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board (note 2) t a = 25 c derate above 25 c p d 400 3.2 mw mw/ c thermal resistance, junction?to?ambient r ja 312 c/w junction and storage temperature t j , t stg ?55 to +150 c 1. fr?5 @ 100 mm 2 , 0.5 oz. copper traces, still air. 2. fr? 5 = 1.0 0.75 0.062 in. device package shipping ? ordering information sc?70 (sot?323) case 419 style 3 marking diagram ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification s brochure, brd8011/d. mmbt5401wt1g, NSVMMBT5401WT1G sc?70 (pb?free) 3000 / tape & reel www. onsemi.com collector 3 1 base 2 emitter *date code orientation and/or overbar may vary depending upon manufacturing location. 4w = specific device code m = date code* = pb?free package (note: microdot may be in either location) 4w m 1
mmbt5401w www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (i c = ?1.0 madc, i b = 0) v (br)ceo ?150 ? vdc collector ?base breakdown voltage (i c = ?100 adc, i e = 0) v (br)cbo ?160 ? vdc emitter ?base breakdown voltage (i e = ?10 adc, i c = 0) v (br)ebo ?5.0 ? vdc collector?base cutoff current (v cb = ?120 vdc, i e = 0) (v cb = ?120 vdc, i e = 0, t a = 100 c) i cbo ? ? ?50 ?50 nadc adc on characteristics dc current gain (i c = ?1.0 madc, v ce = ?5.0 vdc) (i c = ?10 madc, v ce = ?5.0 vdc) (i c = ?50 madc, v ce = ?5.0 vdc) h fe 50 60 50 ? 240 ? ? collector ?emitter saturation voltage (i c = ?10 madc, i b = ?1.0 madc) (i c = ?50 madc, i b = ?5.0 madc) v ce(sat) ? ? ?0.2 ?0.5 vdc base ?emitter saturation voltage (i c = ?10 madc, i b = ?1.0 madc) (i c = ?50 madc, i b = ?5.0 madc) v be(sat) ? ? ?1.0 ?1.0 vdc small? signal characteristics current ?gain ? bandwidth product (i c = ?10 madc, v ce = ?10 vdc, f = 100 mhz) f t 100 300 mhz output capacitance (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) c obo ? 6.0 pf small signal current gain (i c = ?1.0 madc, v ce = ?10 vdc, f = 1.0 khz) h fe 40 200 ? noise figure (i c = ?200 adc, v ce = ?5.0 vdc, r s = 10 , f = 1.0 khz) nf ? 8.0 db product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
mmbt5401w www. onsemi.com 3 figure 1. dc current gain figure 2. collector saturation region i b , base current (ma) 1.0 0.1 0.5 2.0 10 0.2 1.0 5.0 20 50 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 figure 3. collector cut?off region v be , base-emitter voltage (volts) v ce , collector-emitter voltage (volts) , collector current (a) i c 10 3 0.1 0.3 0.2 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 i c = 1.0 ma 10 ma 30 ma 100 ma v ce = 30 v i c = i ces t j = 125 c 75 c 25 c reverse forward i c , collector current (ma) 100 10 1 0.1 10 100 1000 h fe , current gain v ce = 5 v t j = 150 c t j = ?55 c t j = 25 c
mmbt5401w www. onsemi.com 4 figure 4. collector emitter saturation voltage vs. collector current figure 5. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0 0.03 0.05 0.08 0.10 0.15 0.18 0.20 0 .1 0.01 0.001 0.0001 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1.0 figure 6. base emitter voltage vs. collector current i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) 0.13 i c /i b = 10 150 c ?55 c 25 c 0.6 i c /i b = 10 150 c ?55 c 25 c 0.4 0.9 v ce = 10 v 150 c ?55 c 25 c figure 7. temperature coefficients i c , collector current (ma) 2.5 c, capacitance (pf) 100 t j = 25 c c ibo figure 8. switching time test circuit v r , reverse voltage (volts) v , temperature coefficient (mv/ c) figure 9. capacitances 10.2 v v in 10 s input pulse v bb +8.8 v 100 r b 5.1 k 0.25 f v in 100 1n914 v out r c v cc -30 v 3.0 k t r , t f 10 ns duty cycle = 1.0% values shown are for i c @ 10 ma 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.3 3.0 30 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 t j = - 55 c to 135 c vc for v ce(sat) vb for v be(sat) c obo 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 0.2 0.5 1.0 2.0 5.0 10 20 0.3 3.0 0.7 7.0
mmbt5401w www. onsemi.com 5 t, time (ns) 1000 100 200 300 500 700 10 20 30 50 70 0.2 0.5 1.0 2.0 5.0 10 20 0.3 3.0 30 50 100 200 i c , collector current (ma) figure 10. turn?on time i c /i b = 10 t j = 25 c t d @ v be(off) = 1.0 v v cc = 120 v t r @ v cc = 30 v t r @ v cc = 120 v t, time (ns) 2000 100 200 300 500 700 20 30 50 70 0.2 0.5 1.0 2.0 5.0 10 20 0.3 3.0 30 50 100 200 i c , collector current (ma) figure 11. turn?off time 1000 t f @ v cc = 120 v t f @ v cc = 30 v t s @ v cc = 120 v i c /i b = 10 t j = 25 c figure 12. current gain bandwidth product figure 13. safe operating area i c , collector current (a) v ce , collector emitter voltage (v) 100 10 1 0.1 10 100 1000 1000 100 10 1 0.001 0.01 0.1 1 f t , current?gain?bandwidth product (mhz) i c , collector current (a) v ce = 1 v t a = 25 c 1 sec 10 msec
mmbt5401w www. onsemi.com 6 package dimensions sc?70 (sot?323) case 419?04 issue n a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 style 3: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mmbt5401w/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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